| 1. | The photoluminescence spectra were found to have the peak at 360nm and 675nm . we discuss the exciting spectrum and luminescence center separately . we take ito as the underlay material
在光致发光测定中,我们得到了位于360nm和675nm的发光峰,并讨论他们的激发谱和发光中心。 |
| 2. | The aluminates are used as the base and the rare earth materials are used as the luminescence center and trap center . the excitation resource can be visible light and man - made light
它以铝酸盐陶瓷材料为基质，以稀土材料作为掺杂元素形成发光中心和陷阱中心，激发光源可以为目光或人造光源。 |
| 3. | Site - select spectra indicate that the eu3 + in nanoparcles < wp = 7 > formed two kinds of luminescence centers with different branch ratios of 5d0 - 7fj . the ratio of varied with different excitation
用不同能量激发zns时5d0 7f0与5d0 7f1发光分支比不同，表明激发能量对两类发光中心的激发具有选择性。 |
| 4. | Under forward bias , the el spectra are found to have a luminescence band peaked at 510 nm of si - sic > 2 films and al - si - sic > 2 films , which originates mainly from the luminescence centers of some defects in the siox
对薄膜进行了乩谱的测量。发现了si - sio _ 2薄膜和al - si - sio _ 2薄膜均存在很强的峰位在510nm的电致发光( el )谱峰。 |
| 5. | Electron - hole pairs are created by photo - excitation in the nanoscale silicon units , and then recombined radiatively in the thin oxide layers , giving a green or red pl through the luminescence centers outside the nanoscale
不掺sb的szoz与ax层中的发光中心发射的光子能量为2 zcv ，掺sb的sfloz与引x层中的发光中心发射的光子能量为1 |
| 6. | The results show that with the doping of some metal ( such as al ) , the metal elements will exist by the form of atom clusters by adjusting the sputtering parameters . it should sharply increase the intensity of el and not change the luminescence centers
结果表明在硅基薄膜中掺入适量的金属(例如：铝) ，并使其以团簇的形式均匀弥散在薄膜中，有可能既不改变薄膜的发光中心，又可大大提高其发光效率。 |
| 7. | By the aid of pl , ple and el , the influence of the defects , luminescence centers and the structure on luminescence of the films had been investigated , especially on the onset of the bias voltage , the intensity of el , and the efficiency of the el
通过对上述薄膜的pl 、 ple以及el的分析，研究了此头薄膜中所存在的缺陷及发光中心，以及结构对发光的影响。着重讨论了掺铝对薄膜电致发光的启动电压、发光强度、发光效率的影响。 |
| 8. | The intensity of distinguishable pl peaks increased with the increasing n content in the films , and the central positions of the above two pl bands were influenced by both the content of o and n . it is suggested that these pl were originated from luminescence centers related to si - o and 0 - si - n defects
分立峰强度随薄膜中的氮含量增加而升高，荧光带中心位置受到氧、氮含量的影响，分析表明其荧光起源于si - o和n - si - o等复合缺陷组态能级间的辐射跃迁。 |
| 9. | The aluminates are used as the base and the rare earth materials are used as the luminescence center and trap center . the excitation resource can be visible light and man - made light , so this type of long persistent phosphor has the advantages of no - radiation and no need of electricity
它以铝酸盐陶瓷材料为基质，以稀土材料作为掺杂元素形成发光中心和陷阱中心，激发源可以为日光或人造光源，无污染，不消耗电能，是一种高效节能的固体发光显示材料。 |
| 10. | The complex model of luminescence centers and quantum confinement has been proposed to interpret the origin of the green and red - emitting of the ps after modification . the deduction is supported by analyzing the morphology and the surface species of the modified samples through afm , sem , and ftir , xps
通过afm 、 sem及ftir 、 xps对这两种多孔硅样品进行表面形貌和化学成分分析，采用发光中心（ lc ）量子限制效应的复合模型对上述修饰多孔硅的pl峰移现象进行了理论说明。 |
